 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SIPMOS (R) Power Transistor BUZ 21L * N channel * Enhancement mode * Avalanche-rated * Logic Level Pin 1 Pin 2 Pin 3 G Type D Ordering Code S VDS ID RDS(on) Package BUZ 21 L 100 V 21 A 0.085 TO-220 AB C67078-S1338-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID 21 A TC = 25 C Pulsed drain current IDpuls 84 TC = 25 C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 21 11.5 mJ ID = 21 A, VDD = 25 V, RGS = 25 L = 340 H, Tj = 25 C Gate source voltage ESD-Sensitivity HBM as per MIL-STD 883 Power dissipation 100 VGS 20 Class 1 V Ptot 75 W TC = 25 C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 C 1.67 75 E 55 / 150 / 56 K/W Data Sheet 1 05.99 BUZ 21L Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage V(BR)DSS 100 - V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) 1.2 1.6 2 A 0.1 10 1 100 nA 10 100 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS VDS = 100 V, VGS = 0 V, Tj = 25 C VDS = 100 V, VGS = 0 V, Tj = 125 C Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) 0.075 0.085 VGS = 5 V, ID = 10.5 A Data Sheet 2 05.99 BUZ 21L Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance gfs 8 14 - S VDS 2 * ID * RDS(on)max, ID = 10.5 A Input capacitance Ciss 1200 1500 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance Coss 320 580 VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss 160 260 ns VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Rise time 25 40 tr VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Turn-off delay time 110 170 td(off) VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Fall time 210 270 tf VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 100 130 Data Sheet 3 05.99 BUZ 21L Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current IS 21 A TC = 25 C Inverse diode direct current,pulsed ISM 84 V 1.35 1.7 ns 150 C 0.58 - TC = 25 C Inverse diode forward voltage VSD VGS = 0 V, IF = 42 A Reverse recovery time trr VR = 30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge Qrr VR = 30 V, IF=lS, diF/dt = 100 A/s Data Sheet 4 05.99 BUZ 21L Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 5 V 22 A 80 W Ptot 60 ID 18 16 14 12 50 40 10 30 8 6 4 10 2 0 0 20 40 60 80 100 120 C 160 0 0 20 40 60 80 100 120 C 160 20 TC TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C 10 3 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 A K/W ID 10 2 tp = 22.0s ZthJC 10 0 /ID = VD S 100 s RD 10 1 o S( n) 1 ms 10 -1 D = 0.50 10 ms 0.20 0.10 10 0 DC 10 -2 0.05 0.02 0.01 single pulse 10 -1 10 0 10 1 V 10 2 10 -3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Data Sheet 5 05.99 BUZ 21L Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C 50 A Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 0.26 a b c d Ptot = 75W lk j i gh f VGS [V] a 3.0 b 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 9.0 10.0 0.22 ID 40 35 30 25 20 c e RDS (on) 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 i k c 4.5 d 5.0 e f 5.5 6.0 g 6.5 h i 7.0 8.0 j 9.0 k 10.0 c d e f dg h i j k l e g f h j 15 10 b 5 a 0.04 V [V] = GS 0.02 V 7.0 0.00 0 a 3.5 3.0 b 4.0 0 0.0 1.0 2.0 3.0 4.0 5.0 4 8 12 16 20 24 28 32 A 40 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s parameter: tp = 80 s, VDS2 x ID x RDS(on)max 60 A 50 ID VDS2 x ID x RDS(on)max 20 S gfs 16 14 45 40 35 30 25 20 15 12 10 8 6 4 10 5 0 0 1 2 3 4 5 6 7 8 V VGS 2 0 0 10 10 20 30 40 A ID 60 Data Sheet 6 05.99 BUZ 21L Drain-source on-resistance RDS (on) = (Tj) parameter: ID = 10.5 A, VGS = 5 V 0.28 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 0.24 RDS (on)0.22 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 -60 VGS(th) 3.6 3.2 2.8 2.4 98% 98% typ 2.0 typ 1.6 2% 1.2 0.8 0.4 -20 20 60 100 C 160 0.0 -60 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = (VSD) parameter: Tj, tp = 80 s 10 2 nF C A IF 10 0 Ciss 10 1 Coss Crss 10 -1 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -2 0 10 -1 0.0 5 10 15 20 25 30 V VDS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Data Sheet 7 05.99 BUZ 21L Avalanche energy EAS = (Tj) parameter: ID = 21 A, VDD = 25 V RGS = 25 , L = 340 H 110 mJ Typ. gate charge VGS = (QGate) parameter: ID puls = 32 A 16 V EAS 90 80 70 60 VGS 12 10 0,2 VDS max 0,8 VDS max 8 50 40 30 20 2 10 0 20 40 60 80 100 120 C 160 0 0 10 20 6 4 30 40 50 60 70 80 nC 100 Tj QGate Drain-source breakdown voltage V(BR)DSS = (Tj) 120 V 116 V(BR)DSS 114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 C 160 Tj Data Sheet 8 05.99 |
Price & Availability of BUZ21L
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |